英语翻译The above mentioned approaches to enhancing the thermoel
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英语翻译
The above mentioned approaches to enhancing the thermoelectric
performance involve reducing the lattice thermal
conductivity and maintaining the carrier mobility through allscale
hierarchical architectures and band alignment,respectively.
There is another performance enhancing mechanism
that involves modifying the electronic structure of the matrix
itself which can be guided by theory.11–13 In this section,we
discuss the addition of intra-matrix band engineering to further
increase the power factor and performance.For other mechanisms
known to increase Seebeck coefficients see excellent
reviews elsewhere.37,38,73
Lead chalcogenides,particularly PbTe and PbSe,have a
fascinating valence band.In addition to the normal so-called
light hole band at the L point of the highly symmetric Brillouin
zone there is a second valence (the so-called heavy hole
band) band (S) which lies energetically below it.11–13,74–77 The
p-type carriers can be redistributed into the two differentvalence bands at high temperatures when they are doped
heavily
The above mentioned approaches to enhancing the thermoelectric
performance involve reducing the lattice thermal
conductivity and maintaining the carrier mobility through allscale
hierarchical architectures and band alignment,respectively.
There is another performance enhancing mechanism
that involves modifying the electronic structure of the matrix
itself which can be guided by theory.11–13 In this section,we
discuss the addition of intra-matrix band engineering to further
increase the power factor and performance.For other mechanisms
known to increase Seebeck coefficients see excellent
reviews elsewhere.37,38,73
Lead chalcogenides,particularly PbTe and PbSe,have a
fascinating valence band.In addition to the normal so-called
light hole band at the L point of the highly symmetric Brillouin
zone there is a second valence (the so-called heavy hole
band) band (S) which lies energetically below it.11–13,74–77 The
p-type carriers can be redistributed into the two differentvalence bands at high temperatures when they are doped
heavily
上面提到的提高热点性能的方法涉及到分别通过全方位分层体系结构和带对准来降低晶格的热导率和保持载流子的迁移率.存在另一种涉及修改基体本身电子结构的性能提高机理,这可以由理论加以指导[11-13].在本节中,我们讨论了加入基体内带工程设计来进一步提高功率因子和性能.就其他已知的提高赛贝克(Seebeck)系数的机理,请参见其他文献的精彩评述[37,38,73].铅硫族化合物,特别是PbTe和PbSe具有极吸引人的价带.除了通常的在高度对称的Brillouin(布里渊)区L点处的所谓的轻空穴带外,还存在第二价带(所谓的重空穴带),这在能量上位于它的下面[11-13,74-77].p-型载流子当它们被高度参杂时,在高温下可以被重新分布成两种不同的价带.
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